General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

Very fast switching

Trench MOSFETtechnology

ESD protection up to 2 kV

Logic-level compatible

Ultra thin package profile with 0.37 mm height

Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits