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06035J470BBS中文资料

厂家型号

06035J470BBS

文件大小

468.79Kbytes

页面数量

15

功能描述

Heterostructure Field Effect Transistor (GaAs HFET)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

恩XP

06035J470BBS数据手册规格书PDF详情

250--4000 MHz, 12 dB 22.5 dBm GaAs HFET GPA

The MMH3111NT1 is a general purpose amplifier that is internally input and output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 250 to 4000 MHz such as cellular, PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

Features

● Frequency: 250 to 4000 MHz

● P1dB: 22.5 dBm @ 900 MHz

● Small--Signal Gain: 12 dB @ 900 MHz

● Third Order Output Intercept Point: 44 dBm @ 900 MHz

● Single 5 V Supply

● Internally Prematched to 50 Ohms

● Internally Biased

● Cost--effective SOT--89 Surface Mount Plastic Package

● In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

更新时间:2025-10-7 11:06:00
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