位置:NAND512W4A2CZA6F > NAND512W4A2CZA6F详情

NAND512W4A2CZA6F中文资料

厂家型号

NAND512W4A2CZA6F

文件大小

1270.65Kbytes

页面数量

51

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

数据手册

下载地址一下载地址二

生产厂商

numonyx

简称

NUMONYX

中文名称

官网

LOGO

NAND512W4A2CZA6F数据手册规格书PDF详情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 µs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK® packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

更新时间:2025-5-12 17:33:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
0919-
87
公司优势库存 热卖中!
Lyontek
23+24
BGA
27960
原装现货.优势热卖.终端BOM表可配单
ST
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
25+23+
BGA
36613
绝对原装正品全新进口深圳现货
ST
24+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ST
24+
BGA
35200
一级代理分销/放心采购
STM
23+
BGA
6000
原装正品假一罚百!可开增票!
ST
744
BGA
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
23+
BGA
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
ST
TSOP48
1000
原装现货价格有优势量大可以发货

NUMONYX相关电路图

  • Nuvoton
  • NVE
  • NVENT
  • NVIDIA
  • nxp
  • NYLENE
  • O2Micro
  • ODU
  • OENINDIA
  • OHHALLSENSOR
  • OHMITE
  • OKAYA

numonyx

中文资料: 4589条

Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产