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M36P0R8070E0中文资料

厂家型号

M36P0R8070E0

文件大小

638.18Kbytes

页面数量

22

功能描述

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

256 Mbit(x16, multiple bank, multilevel, burst) Flash memory 128 Mbit(burst) PSRAM, 1.8 V supply, multichip package

数据手册

下载地址一下载地址二到原厂下载

生产厂商

NUMONYX

M36P0R8070E0数据手册规格书PDF详情

Description

The M36P0R8070E0 combines two memories in a multichip package:

● 256-Mbit multiple bank Flash memory (the M58PR256J)

● 128-Mbit PSRAM (the M69KB128AA).

This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Numonyx distributor.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory is offered in a stacked TFBGA107 package, and it is supplied with all the bits erased (set to ‘1’).

Features

■ Multichip package

– 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory

– 1 die of 128 Mbit (8 Mb x16) PSRAM

■ Supply voltage

– VDDF = VCCP = VDDQ = 1.7 to 1.95 V

– VPPF = 9 V for fast program (12 V tolerant)

■ Electronic signature

– Manufacturer code: 20h

– Device code: 8818

■ Package

– ECOPACK®

Flash memory

■ Synchronous/asynchronous read

– Synchronous burst read mode: 108 MHz, 66 MHz

– Asynchronous page read mode

– Random access: 93 ns

■ Programming time

– 4 µs typical Word program time using Buffer Enhanced Factory Program command

■ Memory organization

– Multiple bank memory array: 32 Mbit banks

– Four EFA (extended flash array) blocks of 64 Kbits

■ Dual operations

– Program/erase in one bank while read in others

– No delay between read and write operations

■ Security

– 64bit unique device number

– 2112 bit user programmable OTP Cells

■ 100 000 program/erase cycles per block

■ Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked with zero latency

– WPF for block lock-down

– Absolute write protection with VPPF = VSS

■ CFI (common Flash interface)

PSRAM

■ Access time: 70 ns

■ Asynchronous page read

– Page size: 4, 8 or 16 words

– Subsequent read within page: 20 ns

■ Synchronous burst read/write

■ Low power consumption

– Active current: < 25 mA

– Standby current: 200 µA

– Deep power-down current: 10 µA

■ Low power features

– PASR (partial array self refresh)

– DPD (deep power-down) mode

M36P0R8070E0产品属性

  • 类型

    描述

  • 型号

    M36P0R8070E0

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    256 Mbit(x16, multiple bank, multilevel, burst) Flash memory 128 Mbit(burst) PSRAM, 1.8 V supply, multichip package

更新时间:2025-10-4 10:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
09+PBF
BGA
20
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NUMONYX
24+
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5000
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24+
10000
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0925+
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356
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ST
23+
BGA
8560
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原装
20+
原装
56200
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ST/意法
23+
BGA
50000
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ST/意法
23+
BGA
3000
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07+
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300
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ST
23+
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16900
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