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M36P0R8070E0中文资料

厂家型号 | M36P0R8070E0 |
文件大小 | 638.18Kbytes |
页面数量 | 22页 |
功能描述 | 256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package 256 Mbit(x16, multiple bank, multilevel, burst) Flash memory 128 Mbit(burst) PSRAM, 1.8 V supply, multichip package |
数据手册 | |
生产厂商 | numonyx |
简称 | NUMONYX |
中文名称 | |
LOGO |
M36P0R8070E0数据手册规格书PDF详情
Description
The M36P0R8070E0 combines two memories in a multichip package:
● 256-Mbit multiple bank Flash memory (the M58PR256J)
● 128-Mbit PSRAM (the M69KB128AA).
This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Numonyx distributor.
Recommended operating conditions do not allow more than one memory to be active at the same time.
The memory is offered in a stacked TFBGA107 package, and it is supplied with all the bits erased (set to ‘1’).
Features
■ Multichip package
– 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory
– 1 die of 128 Mbit (8 Mb x16) PSRAM
■ Supply voltage
– VDDF = VCCP = VDDQ = 1.7 to 1.95 V
– VPPF = 9 V for fast program (12 V tolerant)
■ Electronic signature
– Manufacturer code: 20h
– Device code: 8818
■ Package
– ECOPACK®
Flash memory
■ Synchronous/asynchronous read
– Synchronous burst read mode: 108 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 93 ns
■ Programming time
– 4 µs typical Word program time using Buffer Enhanced Factory Program command
■ Memory organization
– Multiple bank memory array: 32 Mbit banks
– Four EFA (extended flash array) blocks of 64 Kbits
■ Dual operations
– Program/erase in one bank while read in others
– No delay between read and write operations
■ Security
– 64bit unique device number
– 2112 bit user programmable OTP Cells
■ 100 000 program/erase cycles per block
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked with zero latency
– WPF for block lock-down
– Absolute write protection with VPPF = VSS
■ CFI (common Flash interface)
PSRAM
■ Access time: 70 ns
■ Asynchronous page read
– Page size: 4, 8 or 16 words
– Subsequent read within page: 20 ns
■ Synchronous burst read/write
■ Low power consumption
– Active current: < 25 mA
– Standby current: 200 µA
– Deep power-down current: 10 µA
■ Low power features
– PASR (partial array self refresh)
– DPD (deep power-down) mode
M36P0R8070E0产品属性
- 类型
描述
- 型号
M36P0R8070E0
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
256 Mbit(x16, multiple bank, multilevel, burst) Flash memory 128 Mbit(burst) PSRAM, 1.8 V supply, multichip package
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NUMONYX |
09+PBF |
BGA |
20 |
现货 |
|||
NUMONYX |
2016+ |
BGA |
6528 |
只做进口原装现货!假一赔十! |
|||
NUMONYX |
24+ |
BGA |
5000 |
全现原装公司现货 |
|||
ST |
23+ |
进口原装 |
8811 |
全新原装热卖/假一罚十!更多数量可订货 |
|||
ST |
24+ |
10000 |
|||||
ST |
0925+ |
BGA |
356 |
原装现货海量库存欢迎咨询 |
|||
ST |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
23+ |
17ROHS |
1187 |
原装正品--可开增值税发票量大可订货 |
||||
原装 |
20+ |
原装 |
56200 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
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numonyx
Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产