位置:M36P0R8070E0 > M36P0R8070E0详情

M36P0R8070E0中文资料

厂家型号

M36P0R8070E0

文件大小

638.18Kbytes

页面数量

22

功能描述

256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package

256 Mbit(x16, multiple bank, multilevel, burst) Flash memory 128 Mbit(burst) PSRAM, 1.8 V supply, multichip package

数据手册

下载地址一下载地址二

生产厂商

numonyx

简称

NUMONYX

中文名称

官网

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M36P0R8070E0数据手册规格书PDF详情

Description

The M36P0R8070E0 combines two memories in a multichip package:

● 256-Mbit multiple bank Flash memory (the M58PR256J)

● 128-Mbit PSRAM (the M69KB128AA).

This datasheet should be read in conjunction with the M58PR256J and M69KB128AA datasheets, which are available from your local Numonyx distributor.

Recommended operating conditions do not allow more than one memory to be active at the same time.

The memory is offered in a stacked TFBGA107 package, and it is supplied with all the bits erased (set to ‘1’).

Features

■ Multichip package

– 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory

– 1 die of 128 Mbit (8 Mb x16) PSRAM

■ Supply voltage

– VDDF = VCCP = VDDQ = 1.7 to 1.95 V

– VPPF = 9 V for fast program (12 V tolerant)

■ Electronic signature

– Manufacturer code: 20h

– Device code: 8818

■ Package

– ECOPACK®

Flash memory

■ Synchronous/asynchronous read

– Synchronous burst read mode: 108 MHz, 66 MHz

– Asynchronous page read mode

– Random access: 93 ns

■ Programming time

– 4 µs typical Word program time using Buffer Enhanced Factory Program command

■ Memory organization

– Multiple bank memory array: 32 Mbit banks

– Four EFA (extended flash array) blocks of 64 Kbits

■ Dual operations

– Program/erase in one bank while read in others

– No delay between read and write operations

■ Security

– 64bit unique device number

– 2112 bit user programmable OTP Cells

■ 100 000 program/erase cycles per block

■ Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked with zero latency

– WPF for block lock-down

– Absolute write protection with VPPF = VSS

■ CFI (common Flash interface)

PSRAM

■ Access time: 70 ns

■ Asynchronous page read

– Page size: 4, 8 or 16 words

– Subsequent read within page: 20 ns

■ Synchronous burst read/write

■ Low power consumption

– Active current: < 25 mA

– Standby current: 200 µA

– Deep power-down current: 10 µA

■ Low power features

– PASR (partial array self refresh)

– DPD (deep power-down) mode

M36P0R8070E0产品属性

  • 类型

    描述

  • 型号

    M36P0R8070E0

  • 制造商

    NUMONYX

  • 制造商全称

    Numonyx B.V

  • 功能描述

    256 Mbit(x16, multiple bank, multilevel, burst) Flash memory 128 Mbit(burst) PSRAM, 1.8 V supply, multichip package

更新时间:2025-5-17 10:12:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
09+PBF
BGA
20
现货
NUMONYX
2016+
BGA
6528
只做进口原装现货!假一赔十!
NUMONYX
24+
BGA
5000
全现原装公司现货
ST
23+
进口原装
8811
全新原装热卖/假一罚十!更多数量可订货
ST
24+
10000
ST
0925+
BGA
356
原装现货海量库存欢迎咨询
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
23+
17ROHS
1187
原装正品--可开增值税发票量大可订货
原装
20+
原装
56200
原装优势主营型号-可开原型号增税票
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货

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numonyx

中文资料: 4589条

Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产