位置:M28W160CB100ZB6 > M28W160CB100ZB6详情
M28W160CB100ZB6中文资料
M28W160CB100ZB6数据手册规格书PDF详情
SUMMARY DESCRIPTION
The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.
FEATURES SUMMARY
■ SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply
– VDDQ= 1.65V to 3.6V for Input/Output
– VPP = 12V for fast Program (optional)
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■ BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ SECURITY
– 64 bit user Programmable OTP cells
– 64 bit unique device identifier
– One Parameter Block Permanently Lockable
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ECOPACK® PACKAGES AVAILABLE
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
M28W160CB100ZB6产品属性
- 类型
描述
- 型号
M28W160CB100ZB6
- 制造商
NUMONYX
- 制造商全称
Numonyx B.V
- 功能描述
16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
BGA |
8795 |
专注原装正品现货特价中量大可定 |
||||
ST |
24+ |
BGA |
1470 |
||||
ST |
24+ |
BGA |
2978 |
100%全新原装公司现货供应!随时可发货 |
|||
ST |
23+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
Micron |
1844+ |
TSOP48 |
6528 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
24+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ST/意法 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法 |
24+ |
NA/ |
22 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
21+ |
BGA |
23480 |
||||
ST |
08+ |
TSOP48 |
1570 |
全新原装进口自己库存优势 |
M28W160CB100ZB6 资料下载更多...
M28W160CB100ZB6 芯片相关型号
- IRF1310NSPBF
- IRF9620PBF
- M28W160CT90ZB6
- M28W160ECB
- M28W160ECB90ZB6
- M28W160ECT90ZB6
- M29W400DT45ZE1
- M29W400DT70N1
- M29W400DT70ZA1
- M58BW016DT7T3FF
- M58BW016DT7ZA3FF
- M58BW016FT7ZA3FT
- M58BW16FB4ZA3F
- M58BW16FT5T3F
- M58LR128HD70ZB5E
- M58LR128KB
- M58LR128KD785
- M58LR128KT
- M58LR256KC765
- M58LR256KD765
- M58LT128HSB8ZA6F
- M58LT256JST8ZA6F
- MIC810JUY
- MIC810LYC3
- MIC810MYC3
- S506-125MA
- S506-160MA
- S506-32MA
- S506-400MA
- SDD100
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
numonyx
Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产