Introduction

This datasheet contains information about the Numonyx™ Wireless Flash Memory (W18) device family. This section describes nomenclature used in the datasheet. Section 2.0provides an overview of the W18 flash memory device. Section 6.0, Section 7.0, and Section 8.0describe the electrical specifications for extended temperature product offerings. Ordering information can be found in Section C.

Product Features

„ High Performance Read-While-Write/Erase

— Burst frequency at 66 MHz (zero wait states)

—60ns Initial access read speed

— 11 ns Burst mode read speed

— 20 ns Page mode read speed

— 4-, 8-, 16-, and Continuous-Word Burst mode reads

— Burst and Page mode reads in all Blocks, across all partition boundaries

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 µs/word „

Security

—128-BitOTP Protection Register:

64 unique pre-programmed bits + 64 user-programmable bits

— Absolute Write Protection with VPP at ground

— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability„

Quality and Reliability

—Temperature Range:–40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX™ IX Process

— 130 nm ETOX™ VIII Process

Architecture

— Multiple 4-Mbit partitions

— Dual Operation: RWW or RWE

— Parameter block size = 4-Kword

— Main block size = 32-Kword

— Top or bottom parameter devices

—16-bit wide data bus

Software

— 5 µs (typ.) Program and Erase Suspend latency time

— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible

— Programmable WAIT signal polarity

Packaging and Power

— 90 nm: 32- and 64-Mbit in VF BGA

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

—VCC= 1.70 V to 1.95 V

—VCCQ(90 nm) = 1.7 V to 1.95 V

—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V

—VCCQ(130 nm) = 1.35 V to 2.24 V

— Standby current (130 nm): 8 µA (typ.)

— Read current: 8 mA (4-word burst, typ.)