位置:28F128L18 > 28F128L18详情

28F128L18中文资料

厂家型号

28F128L18

文件大小

1707.81Kbytes

页面数量

106

功能描述

StrataFlash Wireless Memory

数据手册

下载地址一下载地址二

简称

NUMONYX

生产厂商

numonyx

中文名称

官网

LOGO

28F128L18数据手册规格书PDF详情

The Numonyx™ StrataFlash® Wireless Memory (L18) provides read-while-write and read-while-erase capability with density upgrades through 256-Mbit. This family of devices provides high performance at low voltage on a 16-bit data bus. Individually erasable memory blocks are sized for optimum code and data storage.

■ High performance Read-While-Write/Erase

— 85 ns initial access

— 54 MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)

— 1.8 V low-power buffered programming at 7 µs/byte (Typ)

■ Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 128-Mbit devices

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or bottom configurations

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE)

— Status Register for partition and device status

■ Power

— VCC (core) = 1.7 V - 2.0 V

— VCCQ (I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V

— Standby current: 30 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 15 mA (Typ) at 54 MHz

— Automatic Power Savings mode

■ Security

— OTP space: 64 unique factory device identifier bits; 64 user-programmable OTP bits; Additional 2048 user-programmable OTP bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Numonyx® Flash Data Integrator optimized

— Basic Command Set (BCS) and Extended Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— Intel ETOX* VIII process technology (0.13 µm)

■ Density and Packaging

— 128- and 256-Mbit density in VF BGA packages

— 128/0 and 256/0 density in SCSP

— 16-bit wide data bus

28F128L18产品属性

  • 类型

    描述

  • 型号

    28F128L18

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    StrataFlash Wireless Memory

更新时间:2025-6-19 15:35:00
供应商 型号 品牌 批号 封装 库存 备注 价格
INTEL
25+
BGA
526
原装现货热卖中,提供一站式真芯服务
BGA
4
INTEL/英特尔
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
INTEL
2016+
BGA
6000
只做原装,假一罚十,公司可开17%增值税发票!
INTEL
19+
BGA
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
INTEL/英特尔
23+
BGA
50000
全新原装正品现货,支持订货
INTEL/英特尔
24+
NA/
3585
原装现货,当天可交货,原型号开票
INTEL
23+
BGA
7520
专注配单,只做原装进口现货
INTEL
23+
BGA
7520
专注配单,只做原装进口现货
INTEL
0543+
BGA
376
原装正品特价出售

NUMONYX相关芯片制造商

  • Nuvoton
  • NVE
  • NVENT
  • NVIDIA
  • NYLENE
  • O2Micro
  • ODU
  • OENINDIA
  • OEP
  • OHHALLSENSOR
  • OHMITE
  • OKAYA

numonyx

中文资料: 4589条

Numonyx是一家曾经存在的存储技术公司,于2008年由英特尔(Intel)和STMicroelectronics共同创立。Numonyx专注于非易失性存储器(NVM)技术和闪存存储器技术,为客户提供各种存储解决方案和产品。 Numonyx的产品包括闪存存储器、嵌入式存储器、非易失性存储器等,在计算机、消费电子、通信、汽车等领域得到广泛应用。公司致力于技术创新与研发,不断提升产品性能、可靠性和创新性,以满足客户不断增长的需求。 2010年,美国存储技术公司Micron Technology收购了Numonyx,并将其整合为Micron的一部分。这一收购使Micron得以拓展其存储技术领域的产