NPN Silicon Power Transistors SWITCHMODE Bridge Series

.. . specifically designed for use in half bridge and full bridge off line converters.

• Excellent Dynamic Saturation Characteristics

• Rugged RBSOA Capability

• Collector-Emitter Sustaining Voltage — VCEO(SUS) — 400 V

• Collector-Emitter Breakdown — V(BR)CES —650v

• State-of-Art Bipolar Power Transistor Design

• Fast Inductive Switching:

tfj = 25 ns (Typ) @ 100°C

tc = 50 ns (Typ) @ 100°C

tsv = 1 us(Typ)@100°C

• Ultrafast FBSOA Specified

• 100°C Performance Specified for:

RBSOA

Inductive Load Switching

Saturation Voltages

Leakages