U.H.F. POWER TRANSISTOR

N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. frequency range for supply voltages up to 28 V. The transistor is resistance stabilized and is tested under severe load mismatch conditions. Dueto ag old metallization excellent reliability properties have been obtained. The transistor is housed in a capstan envelope with a mpulded cap. All leads are isolated from the stud.