1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56E package optimized

for low RDSon, low IDSS leakage even when hot, high efficiency and high current. Rated to 380 A,

optimized for DC load switch and hot-swap applications.

2. Features and benefits

• 100 avalanche tested at I(AS) = 190 A

• Optimized for low RDSon

• Low leakage < 1 μA at 25 °C

• Low spiking and ringing for low EMI designs

• Optimized for 4.5 V gate drive

• Copper-clip for low parasitic inductance and resistance

• High reliability LFPAK package, qualified to 175 °C

• Wave solderable; exposed leads for optimal solder coverage and visual solder inspection

3. Applications

• Hot swap

• e-Fuse

• Power OR-ing

• DC switch / Load switch

• Battery protection

• Brushed and BLDC (brushless) motor control

• Synchronous rectification in AC-DC and DC-DC applications