General description

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using

TrenchMOS technology.

Features and benefits

• High peak drain current IDM

• Copper clip and flexible Leads

• High operating junction temperature Tj = 175 °C

• Superior reliability

• Low body diode reverse recovery charge Qr

Applications

• Synchronous rectifier

• Forward and flyback converter

• Industrial drive

• Power management system

• Uninterruptible Power Supply (UPS)