1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 Ultra thin package profile of 0.37 mm

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits