1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Extended temperature range Tj = 175 °C

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 1.5 kV HBM (class H1C)

• AEC-Q101 qualified

3. Applications

• Relay driver

• High-speed line driver

• Low-side load switch

• Switching circuits