1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

• 1.5 kV ESD protection (human body model)

• Trench MOSFET technology

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Tin-plated 100 solderable side pads for optical solder inspection

1.3 Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portable devices

• Hard disk and computing power management