1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Ultra low QG, QGD for high system efficiency, especially at higher switching frequencies

• Superfast switching with soft-recovery

• Low spiking and ringing for low EMI designs

• Exposed drain pad for excellent thermal conduction

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

3. Applications

• DC to DC conversion

• Battery management

• Low-side load switch

• Switching circuits