1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3

(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

• Leadless ultra small and ultra thin SMD plastic package: 0.62 x 0.62 x 0.37 mm

3. Applications

• Relay driver

• High-speed line driver

• Low-side load switch

• Switching circuits