1. General description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench

MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)

Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)

Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• 1.8 V RDSon rated for low-voltage gate drive

• Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm

• Exposed drain pad for excellent thermal conduction

• Integrated ultra low VF MEGA Schottky diode

3. Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portables

• Hard disk and computing power management