1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3

(SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Ultra small package: 0.96 × 0.96 × 0.24 mm

• Trench MOSFET technology

3. Applications

• Relay driver

• Battery management

• Low-side load switch

• Switching circuits