1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET

technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

• Trench MOSFET technology

• NPN transistor built-in bias resistors

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

3. Applications

• Charging switch for portable devices

• High-side load switch

• USB port overvoltage protection

• Power management in battery-driven portables

• Hard disk and computing power management