1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Increased efficiency during switching

due to low body diode recovered

charge

Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

Class-D audio amplifiers

DC-to-AC inverters

DC-to-DC convertors

Switched-mode power supplies