1. General description

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD)

plastic package.

NPN complement: PBSS4032NZ-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• Optimized switching time

• High collector current capability IC and ICM

• High collector current gain (hFE) at high IC

• High energy efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• DC-to-DC conversion

• Battery-driven devices

• Power management

• Charging circuits