1.1 General description

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and

N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The

device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

 Very low collector-emitter saturation voltage VCEsat

 High collector current capability IC and ICM

 High energy efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 Load switch  Battery-driven devices

 Power management  Charging circuits

 Power switches (e.g. motors, fans)