1. General description

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBRP123ET

2. Features and benefits

• 600 mA output current capability

• Low collector-emitter saturation voltage VCEsat

• High current gain hFE

• Reduces component count

• Built-in bias resistors

• Reduces pick and place costs

• Simplifies circuit design

• ±10 resistor ratio tolerance

3. Applications

• Digital application in automotive and industrial segments

• Switching loads

• Medium current peripheral driver