1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3

(SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits