General description

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The

NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650

V, 50 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.

Features and benefits

• Collector current (IC) rated at 50 A

• Low conduction and switching losses

• Stable and tight parameters for easy parellel operation

• Maximum junction temperature of 175 °C

• Fully rated as a soft fast reverse recovery diode

• RoHS compliant, lead-free plating

Applications

• Power inverters

• Uninterruptible Power Supply (UPS) inverter

• Photovoltaic (PV) strings

• EV charging

• Induction heating

• Welding