1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. The devices include internal gate resistors and

TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Q101 compliant

Reduced component count due to

integrated gate resistor

1.3 Applications

12 V loads

Automotive systems

General purpose power switching

Motors, lamps and solenoids