1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for intermediate level gate

drive sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V Automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching