1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3

(SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

• Logic-level compatible

• Side wettable flanks for optical solder inspection

• Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)

• AEC-Q101 qualified

3. Applications

• Relay driver

• High-speed line driver

• High-side load switch

• Switching circuits