1. General description

The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate.

The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device

in a mixed 3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall time.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry

disables the output, preventing the damaging backflow current through the device when it is

powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power dissipation

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Inputs accept voltages up to 5 V

• IOFF circuitry provides partial Power-down mode operation

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C