1. General description

The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output of

the device is an open drain and can be connected to other open-drain outputs to implement

active-LOW wired-OR or active-HIGH wired-AND functions.

Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times

across the entire VCC range from 0.8 V to 3.6 V.

This device ensures a very low static and dynamic power consumption across the entire VCC range

from 0.8 V to 3.6 V.

This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry

disables the output, preventing a damaging backflow current through the device when it is powered

down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.2 V to 1.95 V)

• JESD8-5 (1.8 V to 2.7 V)

• JESD8-B (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Low static power consumption; ICC = 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD78B Class II

• Inputs accept voltages up to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial Power-down mode operation

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C