1. General description

The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at

all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very

low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This

device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables

the output, preventing the potentially damaging backflow current through the device when it is

powered down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• CMOS low power dissipation

• High noise immunity

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Low static power consumption; ICC = 0.9 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial Power-down mode operation

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C