位置:74AUP1G08GW-Q100 > 74AUP1G08GW-Q100详情

74AUP1G08GW-Q100中文资料

厂家型号

74AUP1G08GW-Q100

文件大小

258.01Kbytes

页面数量

15

功能描述

Low-power 2-input AND gate

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

NEXPERIA

74AUP1G08GW-Q100数据手册规格书PDF详情

1. General description

The 74AUP1G08-Q100 is a single 2-input AND gate. Schmitt-trigger action at all inputs makes the

circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic

power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified

for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the

potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100

(Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

• Automotive product qualification in accordance with AEC-Q100 (Grade 1)

• Specified from -40 °C to +85 °C and from -40 °C to +125 °C

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• CMOS low power dissipation

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• Low static power consumption; ICC = 0.9 μA (maximum)

• Low noise overshoot and undershoot < 10 % of VCC

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Overvoltage tolerant inputs to 3.6 V

• Low noise overshoot and undershoot < 10 % of VCC

• IOFF circuitry provides partial Power-down mode operation

• ESD protection:

• HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

• CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

更新时间:2025-12-3 15:07:00
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