RU9N65P N沟道高级功率MOSFET
650V/9A,
RDS(开)=750m?(典型)@VGS=10V
低反向传输
超低栅极电荷
100%雪崩测试
提供无铅和绿色设备(符合RoHS)
650V/9A,
RDS (ON) =750m?(Typ.)@VGS=10V
Low Reverse Transfer
Ultra Low Gate Charge
100%_avalanche tested
Lead Free and_Green Devices Available (RoHS Compliant)