位置:UPD488448FF-C80-45-DQ1 > UPD488448FF-C80-45-DQ1详情

UPD488448FF-C80-45-DQ1中文资料

厂家型号

UPD488448FF-C80-45-DQ1

文件大小

1902.8Kbytes

页面数量

30

功能描述

128 M-bit Direct Rambus??DRAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

Renesas Electronics America

简称

NEC瑞萨

中文名称

日本瑞萨电子株式会社官网

LOGO

UPD488448FF-C80-45-DQ1数据手册规格书PDF详情

Description

The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

The µPD488448 is 128M-bit Direct Rambus DRAM (RDRAM), organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 bus efficiency. The Direct RDRAM’s thirty-two banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking.

The µPD488448 is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAMs operate from a 2.5 volt supply.

Features

• Highest sustained bandwidth per DRAM device

- 1.6 GB/s sustained data transfer rate

- Separate control and data buses for maximized efficiency

- Separate row and column control buses for easy scheduling and highest performance

- 32 banks: four transactions can take place simultaneously at full bandwidth data rates

• Low latency features

- Write buffer to reduce read latency

- 3 precharge mechanisms for controller flexibility

- Interleaved transactions

• Advanced power management:

- Multiple low power states allows flexibility in power consumption versus time to transition to active state

- Power-down self-refresh

• Overdrive current mode

• Organization: 1 Kbyte pages and 32 banks, x 16

• Uses Rambus Signaling Level (RSL) for up to 800 MHz operation

• Package : 62-pin TAPE FBGA (µBGA) and 62-pin PLASTIC FBGA (D2BGA (Die Dimension Ball Grid Array) )

更新时间:2025-5-5 9:31:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NEC
95+
QFP100
3560
全新原装进口自己库存优势
NEC
17+
QFP100
9988
只做原装进口,自己库存
NEC
23+
QFP100
20000
全新原装假一赔十
NEC
2025+
TQFP-100
3550
全新原厂原装产品、公司现货销售
NEC
2406+
TQFP-100
3886
优势代理渠道 原装现货 可全系列订货
NEC
24+
QFP
2700
全新原装自家现货优势!
NEC
23+
QFP
19526
NEC
24+
QFP
669
NEC
23+
QFP
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
NEC
1816+
.
6523
科恒伟业!只做原装正品,假一赔十!

NEC相关电路图

  • NEL
  • NELLSEMI
  • NEOTEC
  • NETAPP
  • NEUTRIK
  • NEWHAVEN
  • NEWNEX
  • NEWSCALE
  • NEWSIGHT
  • NEWTC
  • NEXPERIA
  • NEXTCHIP

Renesas Electronics America 日本瑞萨电子株式会社

中文资料: 17167条

Renesas Electronics America是日本瑞萨电子株式会社(Renesas Electronics Corporation)在美国的分支机构,专注于提供各种高性能微控制器、模拟和数字集成电路解决方案。瑞萨电子成立于2002年,是全球领先的半导体制造商,致力于满足汽车、工业、消费电子和通信等多领域的需求。 Renesas Electronics America 提供的产品包括微控制器、微处理器、模拟IC、功率管理IC和系统级集成解决方案,广泛应用于各类嵌入式系统和智能设备中。公司以技术创新为核心竞争力,致力于不断推动产品性能和能效的提升,以满足客户在智能化和数字化时代的需求。