DESCRIPTION

The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Supply voltage : VCC = 2.7 to 3.3 V

• Medium output power :

µPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz

µPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz

µPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz

• Power gain :

µPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz

µPC2763TB; GP = 20 dB TYP. @ f = 0.9 GHz

µPC2771TB; GP = 21 dB TYP. @ f = 0.9 GHz

• Upper limit operating frequency :

µPC2762TB; fu = 2.9 GHz TYP. @ 3dB Bandwidth

µPC2763TB; fu = 2.7 GHz TYP. @ 3dB Bandwidth

µPC2771TB; fu = 2.2 GHz TYP. @ 3dB Bandwidth

• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATIONS

• Buffer amplifiers for mobile telephones : µPC2762TB, µPC2763TB

• PA driver for PDC800M : µPC2771TB