DESCRIPTION

The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application.

FEATURES

• Low on-state resistance

RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)

RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

• Low gate charge

QG = 10 nC TYP. (VGS = 10 V)

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)