DESCRIPTION

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

RDS(on)1 = 5.2 mΩ MAX. (VGS = 10 V, ID = 44 A)

RDS(on)2 = 6.3 mΩ MAX. (VGS = 5.0 V, ID = 44 A)

RDS(on)3 = 6.8 mΩ MAX. (VGS = 4.5 V, ID = 44 A)

• Low input capacitance

Ciss = 9700 pF TYP.

• Built-in gate protection diode