DESCRIPTION

The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band.

Internal input matching circuits are designed to optimize performance. The device has a 0.8 µm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology.

The device incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for surface stability.

FEATURES

• High output power

• High gain

• High power added efficiency

• Internally matched input

• High reliability