DESCRIPTION AND APPLICATIONS

NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.

FEATURES

• High Linear Power and Gain

• Low Internal Modulation Distortion

• High Reliability Gold Metallization

• Emitter Ballasting

• 24 V Operation