DESCRIPTION

The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686s high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount package styles.

FEATURES

• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz

• LOW VOLTAGE/LOW CURRENT OPERATION

• HIGH INSERTION POWER GAIN:

|S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz

|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz

• LOW NOISE: 1.5 dB AT 2.0 GHz

• AVAILABLE IN SIX LOW COST PLASTIC SURFACE

MOUNT PACKAGE STYLES