DESCRIPTION

The NE664M04 is fabricated using NECs state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, the NE664M04 is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm, even with low voltage and low current, making this device an excellent choice for the output or driver stage for mobile or fixed wireless applications.

The NE664M04 is housed in NECs low profile/flat lead style M04 package

FEATURES

• HIGH GAIN BANDWIDTH:

fT = 20 GHz

• HIGH OUTPUT POWER:

P-1dB = 26 dBm at 1.8 GHz

• HIGH LINEAR GAIN:

GL = 12 dB at 1.8 GHz

• LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance