DESCRIPTION

The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 18 A)

• Low gate charge

QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)

• Built-in gate protection diode

• Surface mount device available