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NCEP026N10T中文资料

厂家型号

NCEP026N10T

文件大小

330.55Kbytes

页面数量

6

功能描述

NCE N-Channel Super Trench II Power MOSFET

数据手册

下载地址一下载地址二

生产厂商

NCEPOWER

NCEP026N10T数据手册规格书PDF详情

Description

The series of devices uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

RDS(ON) and Qg. This device is ideal for high-frequency switching

and synchronous rectification.

Application

● DC/DC Converter

●Ideal for high-frequency switching and synchronous

rectification

General Features

● VDS =100V,ID =230A

RDS(ON)=2.15mΩ , typical@ VGS=10V

● Excellent gate charge x RDS(on) product(FOM)

● Very low on-resistance RDS(on)

● 175 °C operating temperature

● Pb-free lead plating

更新时间:2025-12-2 13:02:00
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