Description

The NCE60NP2012K uses advanced trench technology

and design to provide excellent RDS(ON) with low gate

charge. It can be used in a wide variety of applications.

General Features

N channel

● VDS =60V,ID =20A

RDS(ON) <23mΩ @ VGS=10V

RDS(ON) <30mΩ @ VGS=4.5V

p channel

● VDS =-60V,ID =-12A

RDS(ON) <100mΩ @ VGS=-10V

RDS(ON) <125mΩ @ VGS=-4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● H-bridge

● Inverters