Description

The NCE3013J uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS =30V,ID =13A

RDS(ON) <12mΩ @ VGS=10V

RDS(ON) <20mΩ @ VGS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard Switched and High Frequency Circuits

● Uninterruptible Power Supply