Description

The NCE01P35K uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It can

be used in a wide variety of applications.

General Features

● VDS =-100V,ID =-35A

RDS(ON) <40mΩ @ VGS=-10V (Typ:30mΩ)

RDS(ON) <45mΩ @ VGS=-4.5V (Typ:32mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density cell design for ultra low On-Resistance

Application

● Portable equipment and battery powered systems