Description

The NCE01P30I uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications. It is ESD protested.

General Features

● VDS =-100V,ID =-30A

RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ)

RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density cell design for ultra low On-Resistance

Application

● Portable equipment and battery powered systems