Description

The NCE01P03S uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It can

be used in a wide variety of applications. It is ESD protested.

General Features

● VDS =-100V,ID =-3A

RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ)

RDS(ON) <230mΩ @ VGS=-4.5V (Typ:200mΩ)

● Super high dense cell design

● Advanced trench process technology

● Reliable and rugged

● High density celldesign for ultra low on-resistance

Application

● Power switch

● DC/DC converters