位置:N08L163WC2CZ1 > N08L163WC2CZ1详情

N08L163WC2CZ1中文资料

厂家型号

N08L163WC2CZ1

文件大小

241.93Kbytes

页面数量

9

功能描述

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 횞 16 bit

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit

数据手册

下载地址一下载地址二

生产厂商

NANOAMP

N08L163WC2CZ1数据手册规格书PDF详情

Overview

The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

Features

• Single Wide Power Supply Range

2.2 to 3.6 Volts

• Very low standby current

2.0µA at 3.0V (Typical)

• Very low operating current

1.5mA at 3.0V and 1µs(Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.5V

• Very fast output enable access time

25ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Ultra Low Power Sort Available

N08L163WC2CZ1产品属性

  • 类型

    描述

  • 型号

    N08L163WC2CZ1

  • 制造商

    NANOAMP

  • 制造商全称

    NANOAMP

  • 功能描述

    8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit

更新时间:2025-10-25 15:01:00
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