位置:N04L163WC2AB > N04L163WC2AB详情

N04L163WC2AB中文资料

厂家型号

N04L163WC2AB

文件大小

265.34Kbytes

页面数量

11

功能描述

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit

4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit

数据手册

下载地址一下载地址二

生产厂商

NANOAMP

N04L163WC2AB数据手册规格书PDF详情

The N04L163WC2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power

Features

• Single Wide Power Supply Range 2.3 to 3.6 Volts

• Very low standby current 4.0μA at 3.0V (Typical)

• Very low operating current 2.0mA at 3.0V and 1μs (Typical)

• Very low Page Mode operating current 0.8mA at 3.0V and 1μs (Typical)

N04L163WC2AB产品属性

  • 类型

    描述

  • 型号

    N04L163WC2AB

  • 制造商

    NANOAMP

  • 制造商全称

    NANOAMP

  • 功能描述

    4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit

更新时间:2025-10-11 14:20:00
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